Semiconductor device manufacturing method and substrate processing apparatus

ABSTRACT

Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

The present application is a Divisional Application of application Ser.No. 12/750,105, filed Mar. 30, 2010; which claims priority under 35U.S.C. §119 of Japanese Patent Application No. 2009-210590, filed onSep. 11, 2009, in the Japanese Patent Office, the entire contents ofwhich are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing asemiconductor device such as a semiconductor integrated circuit(hereinafter referred to as an IC), and more particularly, to asubstrate processing apparatus for forming a desired film on a substratesuch as a semiconductor wafer (hereinafter referred to as a wafer) onwhich devices such as an IC will be formed, and a method ofmanufacturing a semiconductor device such as an IC.

2. Description of the Prior Art

In a method of manufacturing an IC, a batch type vertical apparatus maybe used to form a film. For example, referring to Patent Document 1, ina semiconductor device manufacturing process, when a film is formedusing an amine-based material, for example, by an atomic layerdeposition (ALD) method, a titanium (Ti) source and a nitrogen (N)source are alternately supplied to a semiconductor silicon substratedisposed in a processing chamber so as to form a TiN film. For a changefrom Ti source to N source, purging is performed using hydrogen (H₂) soas to remove the Ti source from the processing chamber, and for a changefrom N source to Ti source, purging is performed using H₂ so as toremove the N source from the processing chamber.

[Patent Document 1]

Japanese Unexamined Patent Application Publication No. 2006-269532

For example, in the case of a substrate processing apparatus configuredto form a film by alternately supplying sources (A) and (B) to asubstrate disposed in a processing chamber so that the molecules of thesources can be adsorbed on the substrate, when one of the sources issupplied but the other is not yet supplied, it is necessary to removethe former source from the processing chamber and the surface of thesubstrate. in a conventional method, to remove a source from the insideof the processing chamber or the like, hydrogen (H₂) gas or inert gassuch as nitrogen (N₂) gas is continuously or intermittently supplied tothe inside of the processing chamber while exhausting the inside of theprocessing chamber. In such a method, however, it takes long time toremove surplus source molecules adsorbed on a part such as the surfaceof a substrate, and as a result, productivity decreases. Moreover, in aconventional purge method, if purge time is reduced, purging isinsufficiently performed, and as a result, film thickness is increased.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor devicemanufacturing method and a substrate processing apparatus, according towhich molecules of a surplus source can be removed from a substrateprocessing chamber within a short time.

According to the present invention, when a source is removed from asubstrate processing chamber, a purge (removal) inert gas is firststored in a gas tank and is then momentarily supplied to the substrateprocessing chamber. In this case, the kinetic energy of the purge inertgas is high when the purge inert gas collides with molecules of a sourcegas attached to a wafer or the inner wall of the substrate processingchamber. By this collision, molecules of the source gas that arephysically adsorbed on parts such as the wafer but not chemicallycoupled to the parts can be separated.

In addition, since the purge inert gas is momentarily supplied to theinside of the substrate processing chamber, the inside pressure of thesubstrate processing chamber is high as compared with the case of aconventional purge method in which exhausting is performed while supplyan inert gas, and thus molecules of the purge inert gas can reach eventhe insides of grooves or holes formed in the surface of the wafer toincrease purge effect at the grooves or holes. Since physical adsorptionforce is dependent on the van der Waals force of source molecules actingon the surface of a film, the inside pressure of the substrateprocessing chamber is properly increased according to the kinds ofsources and films.

According to an aspect of the present invention, there is provided asemiconductor device manufacturing method comprising:

a first process of forming a film containing a predetermined element ona substrate by supplying a source gas containing the predeterminedelement to a substrate processing chamber in which the substrate isaccommodated;

a second process of removing the source gas remaining in the substrateprocessing chamber by supplying an inert gas to the substrate processingchamber;

a third process of modifying the predetermined element-containing filmformed in the first process by supplying a modification gas that reactswith the predetermined element to the substrate processing chamber;

a fourth process of removing the modification gas remaining in thesubstrate processing chamber by supplying an inert gas to the substrateprocessing chamber; and

a filling process of filling an inert gas in a gas tank connected to thesubstrate processing chamber,

wherein the filling process is performed before each of the secondprocess and the fourth process, and

in each of the second process and the fourth process, the inert gasfilled in the gas tank in the filling process is supplied to thesubstrate processing chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a vertical sectional view illustrating a process furnace of abatch type vertical film-forming apparatus relevant to an embodiment ofthe present invention.

FIG. 2 is a horizontally sectional view illustrating the process furnaceof the batch type vertical film-forming apparatus relevant to anembodiment of the present invention.

FIG. 3 is a view illustrating a film-forming sequence relevant to anembodiment of the present invention.

FIG. 4 is a view illustrating an example of inert gas supply linesrelevant to an embodiment of the present invention.

FIG. 5 is a view illustrating another example of inert gas supply linesrelevant to an embodiment of the present invention.

FIG. 6 is a perspective view illustrating the batch type verticalfilm-forming apparatus relevant to an embodiment of the presentinvention.

FIG. 7 is a vertical sectional view illustrating the batch type verticalfilm-forming apparatus relevant to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described hereinafter withreference to the attached drawings. FIG. 1 is a vertical sectional viewillustrating a process furnace of a batch type vertical film-formingapparatus relevant to an embodiment of the present invention. FIG. 2 isa horizontally sectional view illustrating the process furnace of thebatch type vertical film-forming apparatus relevant to an embodiment ofthe present invention. FIG. 6 is a perspective view illustrating thebatch type vertical film-forming apparatus relevant to an embodiment ofthe present invention.

In the current embodiment, a substrate processing apparatus relevant tothe present invention is configured to alternately supply two or morekinds of film-forming source gases to a substrate so as to allow thesource gases to be adsorbed on the substrate in units of one to severalatomic layers for forming a film by a surface reaction.

[Process Furnace]

As shown in FIG. 1, FIG. 2, and FIG. 6, a substrate processing apparatus1000 relevant to the current embodiment includes a process furnace 202,and the process furnace 202 includes a reaction tube 203 made of quartz.The reaction tube 203 is a reaction vessel configured to accommodatesubstrates (in this example, wafers 200) and treat the wafers 200 byheat. The reaction tube 203 is installed inside a heating unit (in thisexample, a resistance heater 207). The bottom side of the reaction tube203 is hermetically sealed by a seal cap 219 with a sealing member (inthis example, an O-ring 220) being disposed therebetween.

At the outside of the reaction tube 203 and the heater 207, aninsulating member 208 is installed. The insulating member 208 isinstalled in a manner such that the insulating member 208 covers thetopsides of the reaction tube 203 and the heater 207.

The heater 207, the insulating member 208, and the reaction tube 203constitute the process furnace 202. In addition, a substrate processingchamber 201 is formed by the reaction tube 203, the seal cap 219, and abuffer chamber formed in the reaction tube 203.

On the seal cap 219, a substrate holding member (boat 217) is erectedwith a quartz cap 218 being disposed therebetween. The quartz cap 218 isa part that holds the boat 217. The boat 217 is configured to beinserted into the process furnace 202 through an opened bottom side ofthe process furnace 202. In the boat 217, a plurality of wafers 200 thatwill be batch-processed are horizontally oriented and arranged inmultiple stages in a tube-axis direction (vertical direction). Theheater 207 is configured to heat wafers 200 inserted in the processfurnace 202 to a predetermined temperature.

[Source Gas Supply Unit]

At the process furnace 202, a plurality of (at least two) gas supplypipes 232 a and 232 b are installed. Through the two gas supply pipes232 a and 232 b, at least two kinds of process gases (source gases) thatreact with each other are independently supplied to the process furnace202 in turns.

Via the (first) gas supply pipe 232 b, a first process gas is suppliedfrom a first gas supply source 240 b to the substrate processing chamber201 through a flow rate control device such as a mass flow controller(MFC) 241 b, an on-off value 243 b, and a gas supply chamber 249 (referto FIG. 2).

Via the (second) gas supply pipe 232 a, a second process gas is suppliedfrom a second gas supply source 240 a to the substrate processingchamber 201 through an MFC 241 a, an on-off value 243 a, and the bufferchamber 237 formed in the reaction tube 203.

A first source gas supply unit is constituted by parts such as the firstgas supply source 240 b, the MFC 241 b, and the gas supply pipe 232 b.In addition, a second source gas supply unit is constituted by partssuch as the second gas supply source 240 a, the MFC 241 a, and the gassupply pipe 232 a.

[Inert Gas Supply Unit]

As shown in FIG. 1, a gas supply pipe 232 f is connected to the upstreamside of the first gas supply pipe 232 b. At the gas supply pipe 232 f, afirst inert gas supply source 240 f, an MFC 241 f, an on-off valve 243f, a gas tank 245 f, and an on-off valve 243 k are sequentiallyinstalled from the upstream side of the gas supply pipe 232 f. At thegas tank 245 f, a pressure sensor 244 f is installed. In the currentexample, the inner diameter of the gas tank 245 f is greater than anyone of a gas pipe inner diameter between the first inert gas supplysource 240 f and the on-off valve 243 f, a gas pipe inner diameterbetween the gas tank 245 f and the on-off valve 243 f, a gas pipe innerdiameter between the gas tank 245 f and the on-off valve 243 k, theinner diameter of the gas supply pipe 232 f, and the inner diameter ofthe first gas supply pipe 232 b.

A gas supply pipe 232 e is connected to the upstream side of the secondgas supply pipe 232 a. At the gas supply pipe 232 e, a second inert gassupply source 240 e, an MFC 241 e, an on-off valve 243 e, a gas tank 245e, and an on-off valve 243 h are sequentially installed from theupstream side of the gas supply pipe 232 e. At the gas tank 245 e, apressure sensor 244 e is installed. In the current example, the innerdiameter of the gas tank 245 e is greater than any one of a gas pipeinner diameter between the second inert gas supply source 240 e and theon-off valve 243 e, a gas pipe inner diameter between the gas tank 245 eand the on-off valve 243 e, a gas pipe inner diameter between the gastank 245 e and an on-off valve 243 h, the inner diameter of the gassupply pipe 232 e, and the inner diameter of the second gas supply pipe232 a.

In the current embodiment, the ratio of the volume of the substrateprocessing chamber 201/the volume of the gas tank 245 f, or the ratio ofthe volume of the substrate processing chamber 201/the volume of the gastank 245 e is about 200 to about 2000.

An inert gas supply unit is constituted by parts such as the first inertgas supply source 240 f, the MFC 241 f, and the gas supply pipe 232 b,or parts such as the second inert gas supply source 240 e, the MFC 241e, and the gas supply pipe 232 a.

In FIG. 1, the gas supply pipe 232 f (inert gas supply pipe) isconnected to the first gas supply pipe 232 b, and the gas supply pipe232 e (inert gas supply pipe) is connected to the second gas supply pipe232 a. However, alternatively, a plurality of inert gas supply pipes maybe connected to each of the first gas supply pipe 232 b and the secondgas supply pipe 232 a. For example, as shown in FIG. 4, a plurality ofinert gas supply pipes 232 f and 232 m may be connected to the first gassupply pipe 232 b. Alternatively, as shown in FIG. 5, a plurality ofinert gas supply pipes 232 f and 232 n may be connected to the first gassupply pipe 232 b. Inert gas supply pipes may be connected to the secondgas supply pipe 232 a in the same manner as in the case of the first gassupply pipe 232 b. FIG. 4 is a view illustrating an example of inert gassupply lines relevant to an embodiment of the present invention. FIG. 5is a view illustrating another example of inert gas supply linesrelevant to an embodiment of the present invention.

In FIG. 4, two inert gas supply pipes branch off from the first inertgas supply source 240 f, in which one of the two inert gas supply pipesis connected to the gas tank 245 f through the on-off valve 243 f, andthe other is connected to an MFC 241 m. In this case, while collectingan inert gas in the gas tank 245 f by opening the on-off valve 243 f andclosing the on-off valve 243 k, an inert gas of which the flow rate iscontrolled by the MFC 241 m can be supplied to the substrate processingchamber 201 through the first gas supply pipe 232 b by opening an on-offvalve 243 m.

In FIG. 5, an inert gas supply source 240 n is installed independent ofthe first inert gas supply source 240 f, and the inert gas supply source240 n is connected to the first gas supply pipe 232 b through an MFC 241n and an on-off valve 243 n. Like the example shown in FIG. 4, in theexample shown in FIG. 5, while collecting an inert gas in the gas tank245 f by opening the on-off valve 243 f and closing the on-off valve 243k, an inert gas of which the flow rate is controlled by the MFC 241 ncan be supplied to the substrate processing chamber 201 through thefirst gas supply pipe 232 b by opening the on-off valve 243 n.

As schematically shown in FIG. 4 and FIG. 5, it is preferable that theinner diameter of the inert gas supply pipe 232 f be greater than theinner diameter of a part of the first gas supply pipe 232 b which islocated at the upstream side of the joint between the inert gas supplypipe 232 f and the first gas supply pipe 232 b. In this case, inert gascollected in the gas tank 245 f can be easily supplied to the substrateprocessing chamber 201 in a short time. This is the same in the case ofthe second gas supply pipe 232 a.

As described above, in the current embodiment, the inner diameters ofthe gas tanks 245 f and 245 e are greater than the inner diameters ofgas supply pipes. However, if the inner diameters of gas supply pipesare sufficiently large, the inner diameters of the gas tanks 245 f and245 e may not be greater than the inner diameters of gas supply pipes.Furthermore, instead of connecting a gas tank to the first gas supplypipe 232 b or the second gas supply pipe 232 a, the inert gas supplypipes 232 e and 232 f may be directly connected to the substrateprocessing chamber 201.

In addition, a plurality of gas tanks may be installed, and inert gasmay be supplied to the substrate processing chamber 201 from therespective gas tanks. Alternatively, only a single gas tank may beinstalled, and inert gas may be supplied to the substrate processingchamber 201 from the gas tank. For example, only one of the gas tanks245 e and 245 f may be installed.

[Cleaning Gas Supply Unit]

A cleaning gas supply pipes 232 c is connected to the first and secondinert gas supply pipes 232 b and 232 a at the downstream sides of on-offvalves 243 c and 243 d, respectively. At the cleaning gas supply pipe232 c, a third gas (cleaning gas) supply source 240 c, an MFC 241 c, andthe on-off valve 243 c or the on-off valve 243 d are sequentiallyinstalled from the upstream side of the cleaning gas supply pipe 232 c.

From the cleaning gas supply pipe 232 c connected to the second gassupply pipe 232 a and the first gas supply pipe 232 b, inert gas issupplied to the substrate processing chamber 201 through the MFC 241 c,the on-off valve 243 d, and the buffer chamber 237, or through the MFC241 c, the on-off valve 243 c, and the gas supply chamber 249.

To prevent attachment of reaction byproducts, pipe heaters (not shown)capable of heating pipes to about 120° C. are mounted on the gas supplypipes 232 a, 232 b, and 232 c.

[Exhaust Unit]

An end of a gas exhaust pipe 231 is connected to the gas exhaust pipe231 to exhaust the inside of the substrate processing chamber 201. Theother end of the gas exhaust pipe 231 is connected to a vacuum pump(exhaust device) 246 through an auto pressure controller (APC) valve 243g. The gas exhaust pipe 231 is formed by connecting a plurality ofexhaust pipes in series and disposing O-rings between the exhaust pipes.The inside of the substrate processing chamber 201 is exhausted usingthe vacuum pump 246.

The APC valve 243 g is an on-off valve that can be opened and closed forstarring and stopping exhausting, and is a pressure regulating valve ofwhich the opening degree can be adjusted for pressure control.

To prevent attachment of reaction byproducts, a heater (exhaust pipeheating unit) 247 capable of heating a part to at least about 150° C. ismounted on the gas exhaust pipe 231. The heater 247 is controlled by acontroller 321.

An exhaust unit is constituted by parts such as the gas exhaust pipe231, the APC valve 243 g, and the vacuum pump 246.

[First Source Gas Supply Unit]

As shown in FIG. 2, at the inner wall of the reaction tube 203, the gassupply chamber 249 is installed to supply a first process gas. The gassupply chamber 249 is installed from the lower to upper part of thereaction tube 203 along the inner wall of the reaction tube 203 in avertical direction (stacked direction of wafers 200) so as to form a gasdistribution space. The gas supply chamber 249 is independent of thebuffer chamber 237 (described later) configured to supply a secondprocess gas. When a plurality kinds of gases are alternately supplied towafers 200 in a film forming process performed by an ALD method, theoperation of supplying the plurality kinds of gases is shared by the gassupply unit 249 and the buffer chamber 237.

The gas supply chamber 249 includes a plurality of gas supply holes 248c. Like in the case of gas supply holes 248 a of the buffer chamber 237(described later), the gas supply holes 248 c are formed in the vicinityof wafers 200 with the same pitch in a vertical direction for supplyinga first process gas. The first gas supply pipe 232 b is connected to thelower side of the gas supply chamber 249.

Like in the case of the gas supply holes 248 a of the buffer chamber 237(described later), if the pressure different between the buffer chamber237 and the substrate processing chamber 201 is small, it is preferablethat the gas supply holes 248 c have the same size and pitch from theupstream side to the downstream side. However, if the pressure differentis large, it is preferable that the size of the gas supply holes 248 cincrease from the upstream side to the downstream side, or the pitch ofthe gas supply holes 248 b decrease from the upstream side to thedownstream side.

[Second Source Gas Supply Unit]

As shown in FIG. 2, at the inner wall of the reaction tube 203, thebuffer chamber 237 is installed to supply a second process gas. Thebuffer chamber 237 is installed from the lower to upper part of thereaction tube 203 along the inner wall of the reaction tube 203 in avertical direction (stacked direction of wafers 200) so as to form a gasdistribution space.

As shown in FIG. 2, in the inner wall of the buffer chamber 237, thatis, in the vicinity of a circumferential end part of the inner wall ofthe buffer chamber 237 adjacent to the wafers 200, the gas supply holes248 a are formed to supply gas to the substrate processing chamber 201.The gas supply holes 248 a are formed at positions 120 degrees apartfrom the gas supply holes 248 c in the clockwise direction along theinner circumference of the reaction tube 203. The gas supply holes 248 aare formed toward the center (center axis) of the reaction tube 203.Along a predetermined length (a) from the lower side to the upper sidein the vertical direction (stacked direction of wafers 200), the gassupply holes 248 a are arranged with the same size and same pitch.

Near the other circumference end part of the buffer chamber 237 oppositeto the gas supply holes 248 a, a nozzle 233 is installed from the lowerside to the upper side of the reaction tube 203 in the verticaldirection (stacked direction of wafers 200). A plurality of gas supplyholes 248 b are formed in the nozzle 233 for supply gas.

Along the same predetermined length (a) as the length (a) along whichthe gas supply holes 248 a are arranged, the gas supply holes 248 b arearranged in the vertical direction (stacked direction of wafers 200).The gas supply holes 248 b correspond to the gas supply holes 248 a in aone-to-one relation.

If the pressure different between the buffer chamber 237 and thesubstrate_processing chamber 201 is small, it is preferable that the gassupply holes 248 b have the same size and pitch from the upstream sideto the downstream side.

However, if the pressure different is large, it is preferable that thesize of the gas supply holes 248 b increase from the upstream side tothe downstream side, or the pitch of the gas supply holes 248 b decreasefrom the upstream side to the downstream side.

By adjusting the size and pitch of the gas supply holes 248 b from theupstream side to the downstream side, gas can be injected withsubstantially the same flow rate at each of gas supply holes 248 b.Since gas injected through the gas supply holes 248 b is firstintroduced into the buffer chamber 237, gas flow velocity can beuniformly maintained.

That is, in the buffer chamber 237, gas injected through the gas supplyholes 248 b decreases in particle velocity, and then, the gas isinjected to the substrate processing chamber 201 through the gas supplyholes 248 a. Owing to this, when the gas injected through the gas supplyholes 248 b is re-injected through the gas supply holes 248 a, the flowrate and velocity of the gas can be uniform.

As shown in FIG. 2, long and thin rod-shaped electrodes 269 and 270 areinstalled in the buffer chamber 237 in a state where electrodeprotecting tubes 275 protect the rod-shaped electrodes 269 and 270 fromthe upper sides to the lower sides of the rod-shaped electrodes 269 and270. One of the rod-shaped electrodes 269 and 270 is connected to ahigh-frequency power source 273 through a matching device 272, and theother of the rod-shaped electrodes 269 and 270 is connected to areference potential (earth potential). By turning on the high-frequencypower source 273, gas supplied to a plasma generation region 224 betweenthe rod-shaped electrodes 269 and 270 can be excited into a plasmastate.

The electrode protecting tubes 275 can be inserted into the bufferchamber 237 in a state where the electrode protecting tubes 275 isolatethe rod-shaped electrodes 269 and 270 from the inside atmosphere of thebuffer chamber 237. If the insides of the electrode protecting tubes 275are in the same state as the outside air (atmospheric state), therod-shaped electrodes 269 and 270 inserted in the electrode protectingtubes 275 may be oxidized when heated by the heater 207. Therefore, aninert gas filling mechanism is installed to fill inert gas such asnitrogen gas in the electrode protecting tubes 275 or fill inert gas inthe electrode protecting tubes 275 while discharging the inert gas fromthe electrode protecting tubes 275, so as to reduce oxygen concentrationsufficiently for prevent oxidation of the rod-shaped electrodes 269 and270.

[Boat]

As shown in FIG. 1, the boat 217 is placed in the center part of thereaction tube 203. In the boat 217, a plurality of wafers 200 arevertically arranged in multiple stages at the same intervals. The boat217 is configured to be loaded into and unloaded from the reaction tube203 by a boat elevator 121 illustrated in FIG. 6. FIG. 6 will beexplained later.

A boat rotating mechanism 267 is installed to rotate the boat 217 forimproving process uniformity. By the boat rotating mechanism 267, theboat 217 held on the quartz cap 218 is rotated.

[Control Unit]

The controller 321 (control unit) is electrically connected to partssuch as the MFCs 241 a, 241 b, 241 c, 241 e, and 241 f, the on-offvalves 243 a, 243 b, 243 c, 243 d, 243 e, 243 f, 243 h, and 243 k, theAPC valve 243 g, the pressure sensors 244 e, 244 f, and 244 g, theheater 207, the vacuum pump 246, the boat rotating mechanism 267, theboat elevator 121, the high-frequency power source 273, and the matchingdevice 272.

The controller 321 controls operations of parts of the substrateprocessing apparatus 1000, such as flow rate control operations of theMFCs 241 a, 241 b, 241 c, 241 e, and 241 f; opening/closing operationsof the on-off valves 243 a, 243 b, 243 c, 243 d, 243 e, 243 f, 243 h,and 243 k; opening/closing and pressure adjusting operations of the APCvalve 243 g; a temperature adjusting operation of the heater 207;turning-on and -off of the vacuum pump 246; the rotation speed of theboat rotating mechanism 267; lifting operations of the boat elevator121; power supply of the high-frequency power source 273; and animpedance adjustment operation of the matching device 272.

[Example of Film-Forming Process]

Next, an explanation will be given on an exemplary process of forming aTiN film by an ALD method using titanium chloride (TiCl₄) and ammonia(NH₃) as process gases. In an ALD method, at least two process gasesthat react with each other are alternately supplied to form a desiredfilm on the surface of a substrate disposed in a processing chamber.

First, under the control of the controller 321, wafers 200 on whichfilms will be formed are charged into the boat 217, and the boat 217 isloaded into the process furnace 202. After the boat 217 is loaded, underthe control of the controller 321, the following step A to step F areperformed.

[Step A: First Process Gas Supply Step]

In step A, the on-off valve 243 b installed at the first gas supply pipe232 b, and the APC valve 243 g installed at the gas exhaust pipe 231 areboth opened, so that TICL₄ gas (first process gas) of which the flowrate is controlled by the MFC 241 b can be supplied into the substrateprocessing chamber 201 through the gas supply holes 248 c of the gassupply chamber 249 while the TiCl₄ gas is exhausted from the substrateprocessing chamber 201 through the gas exhaust pipe 231.

When TiCl₄ is allowed to flow, the APC valve 243 g is properly adjustedbased on pressure values detected by the pressure sensor 244 g, and theinside pressure of the substrate processing chamber 201 is kept at 20 Pato 200 Pa. The MFC 241 b controls the supply flow rate of the TiCl₄ inthe range from 0.2 g/min to 0.8 g/min. The wafers 200 are exposed to theTiCl₄ for 2 seconds to 20 seconds. At this time, the temperature of theheater 207 is set to a level suitable for keeping the temperature of thewafers 200 in the range from 200° C. to 600° C. By allowing a flow ofTiCl₄, TiCl₄ can be chemically coupled to the surfaces of the wafers200. In addition, there also exists TiCl₄ physically adsorbed on thesurfaces of the wafers 200 although not chemically coupled to thesurfaces of the wafers 200.

In addition, while TiCl₄ is allowed to flow, the heater 247 (exhaustpipe heating unit) heats the gas exhaust pipe 231 and the O-ring 234.For example, the heater 247 is controlled to keep the gas exhaust pipe231 at about 120° C. At a low temperature, organic metal materials (inthis example, TiCl₄) easily adhere to the O-ring 234. If an organicmetal material adheres to the O-ring 234, the organic metal material mayenter the substrate processing chamber 201 during the following steps Bto F, and thus, film quality may deteriorate or impurities maygenerated.

Therefore, while the wafers 200 are processed using an organic metalmaterial, the heater 247 is operated to prevent adhering of the organicmetal material to the O-ring 234. For example, since TiCl₄ easilyadheres at a temperature lower than 150° C., the heater 247 iscontrolled to heat the gas exhaust pipe 231 to a temperature of 150° orhigher.

In addition, when TiCl₄ is allowed to flow, if necessary, inert gas suchas N₂ gas may be simultaneously allowed to flow. Specifically, forexample, in the structure of FIG. 1, the on-off valve 243 f and theon-off valve 243 k may be opened, and while performing a flow ratecontrolling operation by the MFC 241 f, inert gas may be supplied fromthe first inert gas supply source 240 f to the first gas supply pipe 232b through the gas tank 245 f. Alternatively, as shown in FIG. 4, if twoinert gas supply pipes branch off from the first inert gas supply source240 f, inert gas may be supplied to the first gas supply pipe 232 b byusing a route bypassing (detouring around) the gas tank 245 f aftercontrolling the flow rate of the inert gas using the MFC 241 m.Alternatively, as shown in FIG. 5, if the inert gas supply source 240 nis installed independent of the first inert gas supply source 240 f, theon-off valve 243 n may be opened to supply inert gas to the first gassupply pipe 232 b while controlling the flow rate of the inert gas usingthe MFC 241 n.

After the film forming by TiCl₄ is completed, the on-off value 243 b isclosed, and in a state where the APC valve 243 g is opened, thesubstrate processing chamber 201 is vacuum-evacuated so as to exhaustremaining gas. At this time, the inside pressure of the substrateprocessing chamber 201 is kept at 10 Pa or lower.

[Step B: Purge Gas Storing Step]

In step B, the on-off valve 243 k located at the downstream side of thegas tank 245 f is closed, and the on-off valve 243 f located at theupstream side of the gas tank 245 f is opened, so as to supply inert gas(nitrogen gas) to the gas tank 245 f from the first inert gas supplysource 240 f. The inside pressure of the gas tank 245 f is detected bythe pressure sensor 244 f, and if the inside pressure of the gas tank245 f reaches a predetermined first pressure, the on-off valve 243 f isclosed to interrupt supply of inert gas to the gas tank 245 f. Thepredetermined first pressure at which supply of inert gas is interruptedis determined by factors such as a relationship between the volumes ofthe gas tank 245 f and the substrate processing chamber 201 or arelationship between the inner diameters of the gas supply pipes 232 fand 232 b. The predetermined first pressure is determined in a mannersuch that when inert gas stored in the gas tank 245 f is supplied to thesubstrate processing chamber 201 in step C (described later), the insidepressure of the substrate processing chamber 201 is increased by about10 Pa to about 200 Pa as compared with the inside pressure of thesubstrate processing chamber 201 before the inert gas is supplied. Inthe current embodiment, the predetermined first pressure is 0.1 atm to 2atm.

In this way, the inside pressure of a gas tank can be detected using apressure sensor so as to interrupt supply of inert gas to the gas tankif the detected inside pressure of the gas tank reaches a predeterminedpressure. In this case, various substrate processing chambers havingdifferent volumes can be supported by using a gas tank having a fixedvolume. In addition, by using the gas tank having a fixed volume,various film-forming processes can be handled although the film-formingprocesses require different optimal pressure increase values in thesubstrate processing chamber after inert gas is supplied to thesubstrate processing chamber.

Furthermore, as shown in FIG. 3, it may be preferable that step B beperformed together with a step such as step A but not together with stepC (described later), so as to improve throughput. FIG. 3 is a viewillustrating a film-forming sequence relevant to the current embodiment.In FIG. 3, the horizontal axis denotes time, and the vertical axisdenotes flowrate schematically. In FIG. 3, reference numeral 311 denotesstep A, reference numeral 312 denotes step B, reference numeral 313denotes step C (described later), reference numeral 314 denotes step D(described later), reference numeral 315 denotes step E (describedlater), and reference numeral 316 denotes step F (described later).Referring to FIG. 3, step B is performed in parallel with a step such asstep A or step D (described later). However, although throughput isdecreased, step B may not be performed in parallel with such a step.

[Step C: First Process Gas Purge Step]

In step C, after the substrate processing chamber 201 is completelyexhausted in step A, the on-off valve 243 f is closed, and at the sametime, the on-off valve 243 k is opened in a state where the APC valve243 g of the gas exhaust pipe 231 is opened, so as to supply inert gas(in this example, nitrogen gas) to the substrate processing chamber 201from the gas tank 245 f through the gas supply pipes 232 f and 232 b forperforming inert gas purging (in this example, nitrogen purging). Bythis nitrogen purging, source gas (TiCl₄) physically adsorbed on partssuch as the surfaces of the wafers 200 but not chemically coupled to theparts is removed.

In the current embodiment, in a state where exhausting of the substrateprocessing chamber 201 is stopped, inert gas is supplied in a pulsedmode to the substrate processing chamber 201 from the gas tank 245 fwhich is kept at about 0.1 atm to about 2 atm in step B. This nitrogenpurge is performed for about 1 second to 5 seconds.

Thereafter, the on-off valve 243 k of the gas supply pipe 232 f isclosed, and the substrate processing chamber 201 is exhausted to about10 Pa or lower by using the vacuum pump 246, so that source gas ornitrogen released from the wafers 200 can be removed from the substrateprocessing chamber 201.

In this way, if inert gas is supplied from the gas tank 245 f in a statewhere the APC valve 243 g of the gas exhaust pipe 231 is opened, theflow velocity of the inert gas on the wafers 200 may not be decreasedeven at the downstream side opposite to the buffer chamber 237, and thuspurging effect can be obtained.

[Step D: Second Process Gas Introduction Step]

In step D, after remaining gas is exhausted from the substrateprocessing chamber 201 in step C, a second process gas is supplied tothe inside of the substrate processing chamber 201 from the secondprocess gas supply unit. In detail, after remaining gas is exhaustedfrom the substrate processing chamber 201 in step C, in a state wherethe APC valve 243 g of the gas exhaust pipe 231 is opened, the on-offvalue 243 a of the second gas supply pipe 232 a is opened, so thatammonia (NH₃) gas (second process gas) supplied from the second gassupply source 240 a and of which the flow rate is controlled by the MFC241 a can be ejected into the buffer chamber 237 through the gas supplyholes 248 b of the nozzle 233. Thereafter, surplus ammonia gas suppliedto the substrate processing chamber 201 and ammonia gas remaining afterreaction are exhausted through the gas exhaust pipe 231. At this time,high-frequency power may be applied between the rod-shaped electrodes269 and 270 from the high-frequency power source 273 through thematching device 272 so as to excite the ammonia gas into plasma and thensupply the plasma to the substrate processing chamber 201.

When ammonia gas is excited into plasma to flow the excited ammonia gasas an activated species, the APC valve 243 g is properly adjusted tokeep the inside pressure of the substrate processing chamber 201 in therange from 20 Pa to 65 Pa. In the current embodiment, the supply flowrate of ammonia is controlled in the range about 3 slm to about 10 slmby the MFC 241 a. The wafers 200 are exposed to the activated speciesobtained by plasma-exciting ammonia for 10 seconds to 60 seconds. Atthis time, the temperature of the heater 207 is set to a level suitablefor keeping the temperature of the wafers 200 in the range from 200° C.to 600° C.

By supplying the ammonia gas, TiCl₄ chemically coupled to silicon of thewafers 200 in step A is chemically coupled with ammonia to form Ti(titanium atom)-N (nitrogen atom) bonds. In the current embodiment, theammonia gas supplied as a second process gas is a modification gas formodifying TiCl₄ chemically coupled to the wafers 200 in step A intoTi—N. Therefore, in the current embodiment, the second process gassupply unit is a modification gas supply unit. Herein, modification isto modify a film formed on a substrate and containing a first elementinto a film containing the first element and a second element by using agas containing the second element.

Thereafter, the valve 243 a of the second gas supply pipe 232 a isclosed to stop supply of ammonia. In a state where the APC valve 243 gof the gas exhaust pipe 231 is opened, the substrate processing chamber201 is exhausted to about 10 Pa or lower by using the vacuum pump 246,so as to exhaust remaining ammonia from the substrate processing chamber201.

When ammonia gas is supplied, like in step A, inert gas may also besupplied from the inert gas supply source 240 e.

[Step E: Purge Gas Storing Step]

In step E, the on-off valve 243 h located at the downstream side of thegas tank 245 e is closed, and the on-off valve 243 e located at theupstream side of the gas tank 245 e is opened, so as to supply inert gas(nitrogen gas) to the gas tank 245 e from the inert gas supply source240 e. The inside pressure of the gas tank 245 e is detected by thepressure sensor 244 e, and if the inside pressure of the gas tank 245 ereaches a predetermined second pressure, the on-off valve 243 e isclosed to interrupt supply of inert gas to the gas tank 245 e. Thepredetermined second pressure at which supply of inert gas isinterrupted is determined by factors such as a relationship between thevolumes of the gas tank 245 e and the substrate processing chamber 201or a relationship between the inner diameters of the gas supply pipes232 a and 232 e. The predetermined second pressure is determined in amanner such that when inert gas stored in the gas tank 245 e is suppliedto the substrate processing chamber 201 in step F (described later), theinside pressure of the substrate processing chamber 201 is increased byabout 10 Pa to about 200 Pa as compared with the inside pressure of thesubstrate processing chamber 201 before the inert gas is supplied. Inthe current embodiment, the predetermined first pressure is 0.1 atm to 2atm.

Furthermore, like in the case of step B, it may be preferable that stepE be performed together with a step such as step D but not together withstep F (described later) as shown in FIG. 3, so as to improvethroughput.

[Step F: Second Process Gas Purge Step]

In step F, like in step C, after the substrate processing chamber 201 iscompletely exhausted in step D, the on-off valve 243 e is closed, and atthe same time, the on-off valve 243 h is opened in a state where the APCvalve 243 g of the gas exhaust pipe 231 is opened, so as to supply inertgas (in this example, nitrogen gas) to the substrate processing chamber201 from the gas tank 245 e through the gas supply pipes 232 e and 232 afor performing nitrogen gas purging. By this nitrogen purging, sourcegas (ammonia gas) physically adsorbed on parts such as the surfaces ofthe wafers 200 but not chemically coupled to the parts is removed. Thenitrogen purge is performed for about 1 second to 5 seconds.

Thereafter, the on-off valve 243 h of the gas supply pipe 232 e isclosed, and the substrate processing chamber 201 is exhausted to about10 Pa or lower by using the vacuum pump 246, so that source gas ornitrogen released from the wafers 200 can be removed from the substrateprocessing chamber 201.

In this way, if inert gas is supplied from the gas tank 245 e in a statewhere the APC valve 243 g of the gas exhaust pipe 231 is opened, theflow velocity of the inert gas on the wafers 200 may not be decreasedeven at the downstream side opposite to the buffer chamber 237, and thuspurging effect can be obtained.

In step C or step F, since purge inert gas (in this example, nitrogengas) is first stored in the gas tank 245 f or the gas tank 245 e and isthen momentarily supplied to the substrate processing chamber 201 (in avery short time), the kinetic energy of the purge inert gas is high whenthe purge inert gas collides with molecules of the first process gas(source gas, in the example, TiCl₄) or molecules of the second processgas (source gas, in the example, ammonia gas) attached to the wafers 200or the inner wall of the substrate processing chamber 201. By thiscollision, molecules of the source gas that are physically adsorbed onparts such as the wafers 200 but not chemically coupled to the parts areseparated from the parts.

In addition, since the purge inert gas is momentarily supplied to theinside of the substrate processing chamber 201, the inside pressure ofthe substrate processing chamber 201 is high as compared with the caseof a conventional purge method, and thus molecules of the purge inertgas can reach even the insides of grooves or holes formed in thesurfaces of the wafers 200 to increase purge effect (source gas moleculeremoving effect) at the grooves or holes. According to the currentembodiment, in step C or step F, when inert gas is supplied to theinside of the substrate processing chamber 201 from the gas tank 245 for the gas tank 245 e, the inside pressure of the substrate processingchamber 201 is increased by about 10 Pa to 200 Pa within about 2 secondsas compared with the inside pressure of the substrate processing chamber201 before the inert gas is supplied.

If the pressure increase is smaller than about 10 Pa, purge effect maybe insufficient. On the other hand, in a state where the APC valve 243 gis opened, if the pressure increase is larger than about 200 Pa, sinceexhaust system conductance is low, purge gas having kinetic energy maynot collide with physically adsorbed molecules, and thus the purgeeffect may be insufficient.

In the purge of step C, it is necessary to sufficiently remove moleculesof source gas which are physically adsorbed on parts such as the wafers200 but not chemically coupled to the parts. Since physical adsorptionforce is dependent on the van der Waals force of source molecules actingon the surface of a film, whether the pressure increase in the substrateprocessing chamber 201 is sufficient is determined according to thekinds of sources and films. The degree of attack on source gas moleculesby inert gas molecules can be estimated by a pressure increase peak inthe substrate processing chamber 201.

By repeating the cycle of the above-described step A to step F aplurality of times, titanium nitride films can be formed on the wafers200 to a predetermined thickness. In the purge of step C or step F,purge inert gas may be supplied to the inside of the substrateprocessing chamber 201 from the gas tank in a plurality of phases.However, to increase the inside pressure of the substrate processingchamber 201 in a short time, it is preferable that the supply of purgeinert gas be performed at once.

In step A to step F, it is preferable that the heater 247 (exhaust pipeheating unit) continuously heat the gas exhaust pipe 231 to keep the gasexhaust pipe 231 at a predetermined temperature or higher. In step B tostep F, if heating is suspended by stopping the operation of the heater247, a predetermined time is necessary for re-heating to thepredetermined temperature, and thus throughput may decrease. Therefore,in step A to step F, the heater 247 is controlled to continuously heatthe gas exhaust pipe 231.

In addition, although TiCl₄ and NH₃ are used as process gases in theabove-described example, the present invention is not limited thereto.For example, tetrakis(dimethylamino)titanium (TDMAT) and NH₃ may be usedas process gases. In the case of using TDMAT and NH₃, the gas exhaustpipe 231 may be kept at 120° C. or higher in step A to step F.

In addition, although NH₃ is activated by exciting the NH₃ into plasma,the present invention is not limited thereto. For example, NH₃ may beactivated by heating the NH₃ using the heater 207.

[Outline of Substrate Processing Apparatus]

Next, with reference to FIG. 6 and FIG. 7, the substrate processingapparatus 1000 relevant to the current embodiment will be schematicallydescribed. FIG. 6 is a perspective view illustrating the batch typevertical film-forming apparatus relevant to an embodiment of the presentinvention. FIG. 7 is a vertical sectional view illustrating the batchtype vertical film-forming apparatus relevant to an embodiment of thepresent invention.

As shown in FIG. 6, at the front side of the inside of the case 101, acassette stage 105 is installed. The cassette stage 105 is configuredsuch that cassettes 100 used as substrate containers can be transferredbetween the cassette stage 105 and an external carrying device (notshown). At the rear side of the cassette stage 105, a cassette carrier115 is installed. At the cassette carrier 115, a cassette shelf 109 isinstalled to store cassettes 100. In addition, at the upside of thecassette stage 105, an auxiliary cassette shelf 110 is installed tostore cassettes 110. At the upside of the auxiliary cassette shelf 110,a cleaning unit 118 is installed to circuit clean air in the case 101.

At the rear upper side of the case 101, the process furnace 202 isinstalled. At the lower side of the process furnace 202, the boatelevator 121 is installed. The boat elevator 121 is used to raise andlower the boat 217 in which wafers 200 are charged toward and away fromthe process furnace 202. The boat 217 is a substrate holding toolconfigured to hold wafers 200 in a state where the wafers 200 arehorizontally positioned and arranged in multiple stages. At the boatelevator 121, the seal cap 219 is installed as a cover for covering thebottom side of the process furnace 202. The seal cap 219 supports theboat 217 vertically.

Between the boat elevator 121 and the cassette shelf 109, a wafertransfer device 112 is installed to carry wafers 200. Beside the boatelevator 121, a furnace port shutter 116 is installed to hermeticallyclose the bottom side of the process furnace 202. When the boat 217 isplaced outside the process furnace 202, the bottom side of the processfurnace 202 can be closed by the furnace port shutter 116.

A cassette 100 charged with wafers 200 is carried onto the cassettestage 105 from the external carrying device (not shown). Next, thecassette 100 is carried from the cassette stage 105 to the cassetteshelf 109 or the auxiliary cassette shelf 110 by the cassette carrier115. The cassette shelf 109 includes a transfer shelf 123, and the wafertransfer device 112 carries wafers 200 from a cassette 100 accommodatedon the transfer shelf 123. A cassette 100 from which wafers 200 will betransferred to the boat 217 is transferred to the transfer shelf 123 bythe cassette carrier 115. When a cassette 100 is transferred onto thetransfer shelf 123, wafers 200 are transferred from the cassette 100placed on the transfer shelf 123 to the boat 217 placed at a lowerposition.

After a predetermined number of wafers 200 are transferred to the boat217, the boat 217 is loaded into the process furnace 202 by the boatelevator 121, and the process furnace 202 is hermetically closed by theseal cap 219. In the hermetically closed process furnace 202, a processsuch as heat treatment is performed on the wafers 200 by heating thewafers 200 and supplying process gas to the inside of the processfurnace 202.

After the wafers 200 are processed, in the reverse order, the wafers 200are transferred from the boat 217 to the cassette 100 of the transfershelf 123 by the wafer transfer device 112, and then the cassette 100 istransferred by the cassette carrier 115 from the transfer shelf 123 tothe cassette stage 105 where the cassette 100 is carried to the outsideof the case 101 by the external carrying device (not shown).

When the boat 217 is placed at a lower position, the bottom side of theprocess furnace 202 is hermetically closed by the furnace port shutter116 to prevent an inflow of outside air into the process furnace 202.

In addition, the present invention is not limited to the above-describedembodiments. That is, many different embodiments are possible within thescope and spirit of the present invention.

For example, the film-forming process is not limited to a process offorming a titanium nitride film. The film-forming process can be appliedto processes of forming other thin films such as a silicon nitride film,a silicon oxide film, other nitride or oxide films, a metal film, and asemiconductor film (for example, a poly silicon film).

In the above-described embodiments, a bath type vertical film formingapparatus operating according to an ALD method is described; however,the present invention can be applied to other apparatuses such as asingle wafer type apparatus.

In the above-described embodiments, wafer processing is explained;however, other objects such as a photomask, a printed circuit board, aliquid crystal panel, a compact disk, and a magnetic disk can beprocessed.

According to the present invention, molecules of a surplus sourceattached to parts such as the surface of a wafer can be removed in ashort time, and thus, productivity can be improved. In addition, sincesufficient purge is possible within a short time, a thinner film can beformed.

While aspects and embodiments of the present invention have beendescribed, the present invention also includes the followingembodiments.

(Supplementary Note 1)

According to an embodiment of the present invention, there is provided asemiconductor device manufacturing method comprising:

a first process of forming a film containing a first element on asubstrate by supplying a source gas containing the first element to asubstrate processing chamber in which the substrate is accommodated; and

a second process of removing the source gas remaining in the substrateprocessing chamber by momentarily supplying an inert gas to thesubstrate processing chamber.

According to the semiconductor device manufacturing method, surplussource molecules adsorbed on the surface of the substrate or the likecan be removed within a short time.

(Supplementary Note 2)

The semiconductor device manufacturing method of Supplementary Note 1may further comprise:

a third process of supplying a modification gas containing a secondelement to the substrate processing chamber so that the film containingthe first element and formed on the substrate in the first process ismodified into a film containing the first and second elements; and

a fourth process of removing the modification gas remaining in thesubstrate processing chamber by momentarily supplying the inert gas tothe substrate processing chamber.

According to the semiconductor device manufacturing method, surplussource molecules adsorbed on the surface of the substrate or the like inthe first process and the third process can be removed within a shorttime.

(Supplementary Note 3)

In the semiconductor device manufacturing method of Supplementary Note2, the source gas may be liquid at ordinary temperature and pressure;

in the first process, the source gas may be supplied to the substrateprocessing chamber while exhausting an inside atmosphere of thesubstrate processing chamber; and

in the third process, the modification gas may be supplied to thesubstrate processing chamber while exhausting the inside atmosphere ofthe substrate processing chamber.

According to the semiconductor device manufacturing method, in the firstprocess or the third process, adsorption of the source gas or themodification gas to a part such as the surface of the substrate can besuppressed, and thus, in the second process or the fourth process,surplus source molecules adsorbed on the surface of the substrate or thelike can be removed within a short time.

(Supplementary Note 4)

In the semiconductor device manufacturing method of Supplementary Note 2or 3, the inside pressure of the substrate processing chamber may beincreased by about 10 Pa to about 200 Pa after the inert gas is suppliedto the substrate processing chamber in the second process and the fourthprocess.

According to the semiconductor device manufacturing method, surplussource molecules adsorbed on the surface of the substrate or the likecan be effectively removed within a short time.

(Supplementary Note 5)

The semiconductor device manufacturing method of any one ofSupplementary Notes 2 to 4 may further comprise a filling process offilling an inert gas in a gas tank connected to the substrate processingchamber,

wherein the filling process may be performed before each of the secondprocess and the fourth process, and

in each of the second process and the fourth process, the inert gasfilled in the gas tank in the filling process may be supplied to thesubstrate processing chamber.

According to the semiconductor device manufacturing method, surplussource molecules adsorbed on the surface of the substrate or the likecan be easily removed within a short time.

(Supplementary Note 6)

In the semiconductor device manufacturing method of Supplementary Note5, the filling process may be performed in parallel with the firstprocess or the third process so that the filling process is overlappedin time with the first process or the third process.

According to the semiconductor device manufacturing method, surplussource molecules adsorbed on the surface of the substrate or the likecan be removed within a short time without a decrease of productivity.

(Supplementary Note 7)

In the semiconductor device manufacturing method of Supplementary Note 5or 6, the inert gas may be filled in the gas tank in the filling processuntil the gas tank reaches a predetermined pressure.

According to the semiconductor device manufacturing method, although thevolume of the gas tank is constant, various substrate processingchambers having different volumes can be supported by using the gastank. In addition, by using the gas tank having a fixed volume, variousfilm-forming processes can be handled although the film-formingprocesses require different optimal pressure increase values in thesubstrate processing chamber after the inert gas is supplied to thesubstrate processing chamber.

(Supplementary Note 8)

The semiconductor device manufacturing method of any one ofSupplementary Notes 2 to 7 may further comprise an exhausting process ofexhausting an inside atmosphere of the substrate processing chamber,

wherein the first process, the second process, the exhausting process,the third process, the fourth process, and the exhausting process may beperformed in the listed order.

According to the semiconductor device manufacturing method, sourcemolecules released from the surface of the substrate can be surelyremoved.

(Supplementary Note 9)

The semiconductor device manufacturing method of any one ofSupplementary Notes 2 to 4 may further comprise a process of filling aninert gas in an inert gas supply pipe connected to the substrateprocessing chamber,

wherein the process of filling the inert gas in the inert gas supplypipe may be performed before each of the second process and the fourthprocess, and

in each of the second process and the fourth process, the inert gasfilled in the inert gas supply pipe in the process of filling the inertgas in the inert gas supply pipe may be supplied to the substrateprocessing chamber.

According to the semiconductor device manufacturing method, surplussource molecules adsorbed on the surface of the substrate or the likecan be easily removed within a short time.

(Supplementary Note 10)

According to another embodiment of the present invention, there isprovided a substrate processing apparatus comprising:

a substrate processing chamber configured to accommodate a substrate;

a source gas supply unit configured to supply a source gas to thesubstrate processing chamber;

an inert gas supply unit configured to supply an inert gas to thesubstrate processing chamber;

an exhaust unit configured to exhaust an inside atmosphere of thesubstrate processing chamber; and

a control unit configured to control the source gas supply unit, theinert gas supply unit, and the exhaust unit,

wherein the control unit controls supply of the inert gas in a mannersuch that that the inert gas is supplied to the substrate processingchamber after the source gas is supplied to the substrate processingchamber, and the control unit controls the supply of the inert gas tothe substrate processing chamber in a manner such that the inert gas ismomentarily supplied to substrate processing chamber.

According to the substrate processing apparatus, surplus sourcemolecules adsorbed on the surface of the substrate or the like can beremoved within a short time.

(Supplementary Note 11)

The substrate processing apparatus of Supplementary Note 10 may furthercomprise a modification gas supply unit configured to supply amodification gas to the substrate processing chamber,

wherein the control unit may control supply of the inert gas, in amanner such that that the inert gas is supplied to the substrateprocessing chamber after the source gas is supplied to the substrateprocessing chamber, and then the inert gas is supplied to the substrateprocessing chamber after the modification gas is supplied to thesubstrate processing chamber,

wherein the control unit may control the supply of the inert gas to thesubstrate processing chamber in a manner such that such that the inertgas is momentarily supplied to the substrate processing chamber.

According to the substrate processing apparatus, in a source gas supplyprocess or a modification gas supply process, surplus source moleculesadsorbed on the surface of the substrate or the like can be removedwithin a short time.

(Supplementary Note 12)

In the substrate processing apparatus of Supplementary Note 10 or 11,the inert gas supply unit may comprise:

an inert gas supply pipe connected to the substrate processing chamber;

a first inert gas on-off valve configured to open and close the inertgas supply pipe; and

a gas tank installed at an upstream side of the first inert gas on-offvalve,

wherein the control unit may control the supply of the inert gas to thesubstrate processing chamber, in a manner such that such that the inertgas is supplied to the inert gas supply pipe in a state where the firstinert gas on-off valve is closed to store the inert gas in the gas tank,and then the first inert gas on-off valve is opened to supply the inertgas stored in the gas tank to the substrate processing chamber.

According to the substrate processing apparatus, surplus sourcemolecules adsorbed on the surface of the substrate or the like can beremoved within a short time.

(Supplementary Note 13)

In the substrate processing apparatus of Supplementary Note 12, theinert gas supply unit may further comprise a second inert gas on-offvalve installed at an upstream side of the gas tank,

wherein the control unit may control the supply of the inert gas to thesubstrate processing chamber, in manner such that the inert gas issupplied to the inert gas supply pipe in a state where the first inertgas on-off valve is closed and the second inert gas on-off valve isopened so as to store the inert gas in the gas tank, and then the inertgas stored in the gas tank is supplied to the substrate processingchamber in a state where the first inert gas on-off valve is opened andthe second inert gas on-off valve is closed.

According to the substrate processing apparatus, a pressure increase inthe substrate processing chamber can be easily controlled.

(Supplementary Note 14)

In the substrate processing apparatus of Supplementary Note 12 or 13,the gas tank may have an inner diameter greater than that of the inertgas supply pipe.

According to the substrate processing apparatus, the inert gas stored inthe gas tank can be supplied to the substrate processing chamber in ashort time.

(Supplementary Note 15)

In the substrate processing apparatus of any one of Supplementary Notes12 to 14, the ratio of the volume of the substrate processingchamber/the volume of the gas tank may be about 200 to about 2000.

According to the substrate processing apparatus, surplus sourcemolecules adsorbed on the surface of the substrate or the like can beeffectively removed within a short time.

(Supplementary Note 16)

In the substrate processing apparatus of Supplementary Note 10 or 11,the inert gas supply unit may comprise:

an inert gas supply pipe connected to the substrate processing chamber;and

a first inert gas on-off valve configured to open and close the inertgas supply pipe,

wherein the control unit may control the supply of the inert gas to thesubstrate processing chamber, in a manner such that such that the inertgas is filled in the inert gas supply pipe in a state where the firstinert gas on-off valve is closed, and then the first inert gas on-offvalve is opened to supply the inert gas filled in the gas tank to thesubstrate processing chamber.

According to the substrate processing apparatus, surplus sourcemolecules adsorbed on the surface of the substrate or the like can beremoved within a short time.

1. A substrate processing apparatus comprising: a substrate processingchamber configured to accommodate a substrate; a source gas supply unitconfigured to supply a source gas to the substrate processing chamber; amodification gas supply unit configured to supply a modification gas tothe substrate processing chamber; an inert gas supply unit configured tosupply an inert gas to the substrate processing chamber; an exhaust unitconfigured to exhaust an inside atmosphere of the substrate processingchamber; and a control unit configured to control the source gas supplyunit, the modification gas supply unit, the inert gas supply unit, andthe exhaust unit, wherein the inert gas supply unit comprises: an inertgas supply pipe connected to the substrate processing chamber, a firstinert gas on-off valve configured to open and close the inert gas supplypipe, and a gas tank installed at an upstream side of the first inertgas on-off valve, wherein the control unit controls supply of the inertgas, in a manner such that that the inert gas is supplied to thesubstrate processing chamber after the source gas is supplied to thesubstrate processing chamber, and then the inert gas is supplied to thesubstrate processing chamber after the modification gas is supplied tothe substrate processing chamber, and wherein the control unit controlsthe supply of the inert gas to the substrate processing chamber, in amanner such that the inert gas is supplied to the inert gas supply pipein a state where the first inert gas on-off valve is closed to store theinert gas in the gas tank, and then the first inert gas on-off valve isopened to supply the inert gas stored in the gas tank to the substrateprocessing chamber.
 2. The substrate processing apparatus of claim 1,wherein the control unit controls the supply of the inert gas to thesubstrate processing chamber in a manner such that the inert gas ismomentarily supplied to the inert gas supply pipe.
 3. The substrateprocessing apparatus of claim 1, wherein the inert gas supply unitfurther comprises: a second inert gas on-off valve installed at anupstream side of the gas tank, wherein the control unit controls thesupply of the inert gas to the substrate processing chamber, in mannersuch that the inert gas is supplied to the inert gas supply pipe in astate where the first inert gas on-off valve is closed and the secondinert gas on-off valve is opened so as to store the inert gas in the gastank, and then the inert gas stored in the gas tank is supplied to thesubstrate processing chamber in a state where the first inert gas on-offvalve is opened and the second inert gas on-off valve is closed.